| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device and a method for manufacturing the same for lowering power consumption and improving yield and reliability even when a display is enlarged. <P>SOLUTION: An inversely-staggered thin film transistor is manufactured as a pixel thin film transistor used for a display. In the inversely-staggered thin film transistor, a source wiring and a gate electrode are manufactured on the same surface. A metal wiring connecting the source wiring and the inversely-staggered thin film transistor and a metal wiring connecting a pixel electrode and the inversely-staggered thin film transistor are manufactured in the same process. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011258979(A) |
申请公布日期 |
2011.12.22 |
| 申请号 |
JP20110182531 |
申请日期 |
2011.08.24 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
FUJIKAWA SAISHI;KUWABARA HIDEAKI |
| 分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/3205;H01L21/336;H01L23/52 |
主分类号 |
H01L29/786 |
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