发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device manufacturing method includes forming an insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition; making UV cure on the insulation film being heated at a temperature of 350° C. or below after the forming the insulation film; and making helium plasma processing on the insulation film after the UV cure. |
申请公布号 |
US2011312191(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113070740 |
申请日期 |
2011.03.24 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
OHKURA YOSHIYUKI;MORI TOSHIKI |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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