CATHODE STRUCTURE OF GATE FIELD EMISSION DISPLAY WITH EDGE ENHANCEMENT EFFECT AND PREPARATION METHOD THEREOF

摘要

A cathode structure of a gate field emission display with edge enhancement effect. The cathode structure comprises a cathode substrate (21), and a cathode unit including an electronic emission cathode material layer, a gate layer and a dielectric layer. The electronic emission cathode material layer and the gate layer are arranged on the cathode glass substrate (21) in a coplanar manner, corresponding to each other and separated by the dielectric layer. Through controlling the width ratio of a strip-shaped electrode (22) to the dielectric layer, the edge of the strip-shaped electrode (22) on the cathode substrate (21) is exposed, and the strip-shaped electrode (22) which is closest to the glass substrate (21) is exposed by etching the glass. The arbitrary selection and control of an emitter and a gate are realized by the electrical characteristics of increasing the electric field strength at the edge of the structure. The edge structure is formed at an emission source, thereby improving the electric field at the emission source. Therefore the control role of the gate is enhanced, the threshold electric field of the field emission cathode is reduced, the field emission performance of the cathode of the field emission display device is improved, the process procedure is simplified and the manufacturing cost is reduced.