| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce occurrence of dishing in chemical mechanical polishing by reducing occurrence of an under plate when wiring grooves of wide width and narrow width are filled by electroplating of Cu. <P>SOLUTION: A method of forming a wiring structure comprises: a step of forming a resist film R1 on the surface of an insulating film where a first wiring groove 22A having a small aspect ratio is formed in a first region and a second wiring groove 22B having a large aspect ratio is formed in a second region, and forming a first resist opening R1A for exposing the first region, a step of filling the first wiring groove with a first wiring pattern 25A by performing electrolytic plating by using the resist film as a mask, a step of forming a second resist opening for exposing the second region, a step of filling the second wiring groove with a second wiring pattern by performing electrolytic plating by using the resist film as a mask, and a step of removing the resist film and planarizing the first and second wiring patterns by chemical mechanical polishing so that the surfaces are in flush with the surface of the insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
