| 摘要 |
A Group III-V solar cell and a manufacturing method thereof, wherein, three amorphous silicon layers are formed on a substrate, which includes a first type amorphous silicon layer, an intrinsic amorphous silicon layer, and a second type amorphous silicon layer. The lattice characteristics of amorphous silicon layer are utilized, and a Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer, such that amorphous silicon and Group III-V material are able to perform photoelectric conversion simultaneously in raising photoelectric conversion efficiency of said Group III-V solar cell effectively by means of a direct energy gap of said Group III-V material.
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