发明名称 SEMICONDUCTOR FABRICATION
摘要 Embodiments of the present invention provide the ability to fabricate devices having similar physical dimensions, yet with different operating characteristics due to the different effective channel lengths. The effective channel length is controlled by forming an abrupt junction at the boundary of the gate and at least one source or drain. The abrupt junction impacts the diffusion during an anneal process, which in turn controls the effective channel length, allowing physically similar devices on the same chip to have different operating characteristics.
申请公布号 US2011309445(A1) 申请公布日期 2011.12.22
申请号 US20100816697 申请日期 2010.06.16
申请人 KULKARNI PRANITA;CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KULKARNI PRANITA;CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI
分类号 H01L27/12;H01L21/28 主分类号 H01L27/12
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