| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode with high light emission efficiency. <P>SOLUTION: The light-emitting diode comprises: a substrate; a first semiconductor layer; a second semiconductor layer; an active layer; a first electrode; a second electrode; and a three-dimensional nanostructure array. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on the substrate in a direction separating from the substrate. The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. The three-dimensional nanostructure array is disposed on the opposite surface to the surface adjacent to the active layer of the second semiconductor layer. The three-dimensional nanostructure array includes a plurality of nanostructures, and the nanostructures are trapezoid-shaped three-dimensional nanostructures. <P>COPYRIGHT: (C)2012,JPO&INPIT |
