发明名称 |
THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER |
摘要 |
This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target. |
申请公布号 |
US2011309444(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US200913138159 |
申请日期 |
2009.10.22 |
申请人 |
MAKI KAZUNARI;YAGUCHI KENICHI;NAKASATO YOSUKE;MORI SATORU;ULVAC, INC.;MITSUBISHI MATERIALS CORPORATION |
发明人 |
MAKI KAZUNARI;YAGUCHI KENICHI;NAKASATO YOSUKE;MORI SATORU |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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