| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element of which the magnetization direction is stable in the film surface perpendicular direction, and the magnetic resistance change rate is controlled, and also to provide a magnetic memory using the magneto-resistance effect element. <P>SOLUTION: A material of ferromagnetic layers 106, 107 constituting the magneto-resistance effect element is constituted of a ferromagnetic material including at least one kind of 3d transition metals to control the magnetic resistance change rate, and the film thickness of the ferromagnetic layers is controlled at an atomic layer level to change the magnetization direction from the in-plane direction of a film surface to the film surface perpendicular direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
