SUBSTRATE ETCHING METHOD AND METHOD FOR MANUFACTURING SAPPHIRE SUBSTRATE

摘要

Disclosed are a substrate etching method and a method for manufacturing a sapphire substrate with which etching selectivity can be improved for a substrate facing an organic resist. The substrate etching method includes the formation of plasma containing a hydrocarbon to thereby progress etching of an aluminium compound substrate. Furthermore, with this substrate etching method, the progress of resist etching by means of plasma is suppressed by depositing onto the resist the hydrocarbon-based reaction product generated by the plasma. Consequently, due to this substrate etching method, the etching rate of the resist can be lowered to thereby make it possible to increase etching selectivity of a substrate facing the resist and to form a fine concave/convex pattern in the surface of the substrate without having to employ a thick resist.