METHOD FOR FORMATION OF CRYSTALLINE SILICON LAYER AND METHOD FOR FORMATION OF THIN FILM TRANSISTOR USING THE SAME
摘要
<p>PURPOSE: A method for forming a polycrystalline silicon layer and a method for forming a thin film transistor using the same are provided to control a leakage current and leakage current dissemination of the thin film transistor by controlling the location and number of a grain boundary within the polycrystalline silicon. CONSTITUTION: A buffer layer is formed on a substrate(S110). A catalyst metal layer is formed on the buffer layer(S120). A first amorphous silicon layer is formed on the catalyst metal layer(S130). A catalyst metal capping pattern is formed by patterning the first amorphous silicon layer(S140). The thermal process is executed in 300-500°C range. The catalyst metal layer which is formed on a domain except for the catalyst metal capping pattern is eliminated when patterning the first amorphous silicon layer. A second amorphous silicon layer is formed on the catalyst metal capping pattern and the buffer layer(S150). The second amorphous silicon layer is crystallized by a thermal process(S160).</p>
申请公布号
KR20110137086(A)
申请公布日期
2011.12.22
申请号
KR20100057111
申请日期
2010.06.16
申请人
SAMSUNG MOBILE DISPLAY CO., LTD.
发明人
PARK, SEUNG KYU;LEE, KI YONG;SEO, JIN WOOK;JEONG, MIN JAE;CHUNG, YUN MO;SON, YONG DUCK;SO, BYUNG SOO;PARK, BYOUNG KEON;LEE, KIL WON;LEE, DONG HYUN;PARK, JONG RYUK;LEE, TAK YOUNG;JUNG, JAE WAN