METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE

摘要

A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain.