| 摘要 |
In an image sensor 1 according to an embodiment of the present invention, a plurality of embedded photodiodes PD(m,n) are arrayed. Each of the embedded photodiodes PD(m,n) comprises a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 formed on the first semiconductor region 10 and having a low concentration of an impurity of a second conductivity type; a third semiconductor region 30 of the first conductivity type formed on the second semiconductor region 20 so as to cover a surface of the second semiconductor region 20; and a fourth semiconductor region 40 of the second conductivity type for extraction of charge from the second semiconductor region 20; the fourth semiconductor region 40 comprises a plurality of fourth semiconductor regions 40 arranged as separated, on the second semiconductor region 20. |
