发明名称 SUBSTRATE FOR GROWTH OF CARBON NANOTUBE, METHOD FOR GROWTH OF CARBON NANOTUBE, METHOD FOR CONTROL OF PATICLE DIAMETER OF CATALYST FOR GROWTH OF CARBON NANOTUBE, AND METHOD FOR CONTROL CARBON NANOTUBE DIAMETER
摘要 <p>A substrate for the growth of a carbon nanotube having a catalyst layer microparticulated by using an arc plasma gun. CNT is grown on the catalyst layer by thermal CVD or remote plasma CVD. The particle diameter of the catalyst for the growth of CNT is regulated by the number of shots of the are plasma gun. CNT is grown on the catalyst layer having a regulated catalyst particle diameter by thermal CVD or remote plasma CVD to regulate the inner diameter or outer diameter of CNT.</p>
申请公布号 KR101096482(B1) 申请公布日期 2011.12.20
申请号 KR20087031229 申请日期 2007.05.29
申请人 发明人
分类号 B82B3/00;B01J23/74;C01B31/02 主分类号 B82B3/00
代理机构 代理人
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