MANUFACTURING METHOD OF SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT, AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state imaging element capable of improving pixel characteristics of a solid-state imaging element and reducing a manufacturing cost.

SOLUTION: The manufacturing method of the solid-state imaging element comprises: a step of forming a first conductive charge storage region 5 where a sensor part is configured in a semiconductor substrate 1 by ion implantation using the same mask when the solid-state imaging element is manufactured and forming a second conductive second impurity region 6 on this conductive charge storage region 5; a step of forming a transfer gate 9 that constitutes a charge transfer part on a surface of the semiconductor substrate 1 extending over the charge storage region 5; and a step of forming a second conductive first impurity region 7 whose impurity concentration is higher than impurity concentration of the second conductive second impurity region 6 on the surface of the sensor part of the semiconductor substrate 1 by ion implantation using the transfer gate 9 as the mask.

COPYRIGHT: (C)2012,JPO&INPIT