发明名称 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film transistor capable of achieving a performance improvement. <P>SOLUTION: An organic TFT includes: a gate electrode 2; an organic semiconductor layer 6; and a gate insulation layer 3 located between the gate electrode 2 and the organic semiconductor layer 6 and adjacent to the organic semiconductor layer 6. The gate insulation layer 3 contains a material in which a first monomer (&alpha;-methylstyrene or the like) of at least one of styrene and styrene derivatives and a second monomer (glycidyl methacrylate or the like) having a carbon-carbon double bond and a cross-linking reactive group are copolymerized and cross-linked. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011253990(A) 申请公布日期 2011.12.15
申请号 JP20100127896 申请日期 2010.06.03
申请人 SONY CORP 发明人 FUKUDA TOSHIO
分类号 H01L29/786;G02F1/1368;H01L21/283;H01L51/05;H01L51/30 主分类号 H01L29/786
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