| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Cr-Ti alloy target material capable of suppressing particle generation in sputtering. <P>SOLUTION: The Cr-Ti alloy target material includes 40-60 atom% of Ti and includes a residual part Cr and unavoidable impurities. In the Cr-Ti alloy target material, when it is assumed that diffraction peak intensity of the (110) plane of a Cr phase in X-ray diffraction on a sputtering surface and diffraction peak intensity of the (311) plane of a TiCl<SB POS="POST">2</SB>compound phase are A and B, respectively, a relative intensity ratio B/A is ≤10%. <P>COPYRIGHT: (C)2012,JPO&INPIT |
