ESD and EMC optimized HV-MOS Transistor

摘要

Devices and circuits related to Electrostatic discharge (ESD) and Electromagnetic compatibility (EMC) are herein described. An ESD protection device is incorporated into a transistor in order to protect the gate of the transistor from excessive current loads related to ESD or EMC events. In an implementation, a device includes a first diode and a second diode that are electrically connected via their respective cathodes. The breakdown voltage of the first diode is lower than the breakdown voltage of the second diode in order to divert excessive current through the second diode.