发明名称 |
VERFAHREN ZUM HERSTELLEN VON MULTIKRISTALLINEN SILIZIUM-SOLARZELLEN DES N-TYPS |
摘要 |
<p>The invention provides solar cells and methods of manufacturing solar cells having a Hetero-junction with Intrinsic Thin-layer (HIT) structure using an n-type multicrystalline silicon substrate. An n-type multicrystalline silicon substrate is subjected to a phosphorus diffusion step using a relatively high temperature. The front side diffusion layer is then removed. As a next step, a p-type silicon thin film is deposited at the front side of the substrate. This sequence avoids heating the p-type silicon thin film above its deposition temperature, and maintains the quality of the p-type silicon thin film.</p> |
申请公布号 |
AT537562(T) |
申请公布日期 |
2011.12.15 |
申请号 |
AT20060799532T |
申请日期 |
2006.10.04 |
申请人 |
STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND |
发明人 |
KOMATSU, YUJI;GOLDBACH, HANNO;SCHROPP, RUDOLF;GEERLIGS, LAMBERT |
分类号 |
H01L31/0747;H01L31/18 |
主分类号 |
H01L31/0747 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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