A RESISTANCE RANDOM ACCESS MEMORY HAVING A CROSS POINT STRUCTURE, AND A METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a resistance random access memory having a cross point structure, and a method for manufacturing same. The method includes: forming a p-type oxide layer by depositing at least one of PCMO(Pr1-XCaXMnO3), LCMO(La1-XCaXMnO3), and LSMO(La1-xSrxMnO3) on a substrate; forming an n-type metal layer by depositing an n-type reactive metal on the p-type oxide layer; and forming a Schottky barrier prepared by reacting the p-type oxide layer with the n-type reactive metal. According to the present invention, since a Schottky barrier is self-formed through the oxidation-reduction reaction between a p-type oxide layer having PCMO deposited thereon and an n-type meal layer having an n-type reactive metal deposited thereon, a resistance random access memory having a cross point structure is manufactured without the process for forming a transistor or a diode; and also, since additional processes for manufacturing a diode or a transistor are unnecessary, economical efficiency is high and manufacturing yield is improved.