发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device including a plurality of layers each including a memory cell array and which are stacked over each other; and at least one power plane for supplying power to the layers. The power plane includes a region to which a power voltage is applied and a region to which a ground voltage is applied. The region to which a power voltage is applied is located adjacent to the region to which a ground voltage is applied, and forms a decoupling capacitor therebetween to decouple an influx of power noise to the layers or generation of power noise in the layers
申请公布号 US2011305100(A1) 申请公布日期 2011.12.15
申请号 US201113152316 申请日期 2011.06.03
申请人 YU HAK-SOO;BAEK IN-GYU;HWANG HONG-SUN;MOON YOUNG-KUG;SAMSUNG ELECTRONICS CO., LTD. 发明人 YU HAK-SOO;BAEK IN-GYU;HWANG HONG-SUN;MOON YOUNG-KUG
分类号 G11C5/14 主分类号 G11C5/14
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