发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device including a plurality of layers each including a memory cell array and which are stacked over each other; and at least one power plane for supplying power to the layers. The power plane includes a region to which a power voltage is applied and a region to which a ground voltage is applied. The region to which a power voltage is applied is located adjacent to the region to which a ground voltage is applied, and forms a decoupling capacitor therebetween to decouple an influx of power noise to the layers or generation of power noise in the layers |
申请公布号 |
US2011305100(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113152316 |
申请日期 |
2011.06.03 |
申请人 |
YU HAK-SOO;BAEK IN-GYU;HWANG HONG-SUN;MOON YOUNG-KUG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YU HAK-SOO;BAEK IN-GYU;HWANG HONG-SUN;MOON YOUNG-KUG |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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