| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems with respect to refinement of a channel length and improvement of reproducibility of the channel length that defines electric characteristics of a linear MISFET and is defined by a distance between a source region and a drain region along a cylindrical gate insulation region, while the MISFET is flexible, resilient and applicable to an integrated circuit with an arbitrary shape as its features and employs a structure in which the source region and the drain region are arranged in parallel. <P>SOLUTION: An MISFET employs a structure in which a source region and a drain region interpose a semiconductor region as a channel region. It is configured to apply a control voltage via a gate insulation region to the semiconductor region to control a current flowing between the source region and the drain region. Thereby, since a channel length is defined by a film thickness of the semiconductor region, this enables to refine the channel length and to improve reproducibility. <P>COPYRIGHT: (C)2012,JPO&INPIT |
