发明名称 |
NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR |
摘要 |
A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper face of the substrate 1, such that the substrate 1 and the semiconductor multilayer structure 40 have at least two cleavage planes. At least one cleavage inducing member 3 which is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing member 3 along a direction parallel to the cleavage plane is smaller than a size of the upper face of the substrate 1 along the direction parallel to the cleavage plane.
|
申请公布号 |
US2011304025(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113213362 |
申请日期 |
2011.08.19 |
申请人 |
ANZUE NAOMI;YOKOGAWA TOSHIYA;HASEGAWA YOSHIAKI;PANASONIC CORPORATION |
发明人 |
ANZUE NAOMI;YOKOGAWA TOSHIYA;HASEGAWA YOSHIAKI |
分类号 |
H01L23/544;H01L21/78 |
主分类号 |
H01L23/544 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|