| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor film vapor phase growth susceptor suitable for the vapor phase growth of a compound semiconductor film which can reduce a difference of an element, for example, a luminous element produced from near an end portion of a substrate from a luminous element produced from a central portion of the substrate because the former does not exhibit a long emission wavelength, that is, which can reduce a difference in characteristics between elements produced from the central and the peripheral portion of the substrate. <P>SOLUTION: A susceptor is used to hold a substrate during a vapor phase growth of a compound semiconductor film. The susceptor of the present invention includes at least one or more of a countersunk section in which the substrate is to be placed. The countersunk section is curved in conical form on a bottom face at the base thereof, with the concave portion of the curved section adapted to be 250 to 500 μm in maximum depth. <P>COPYRIGHT: (C)2012,JPO&INPIT |
