发明名称 MICRO-MACHINED THIN FILM HYDROGEN GAS SENSOR, AND METHOD OF MAKING AND USING THE SAME
摘要 <p>A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.</p>
申请公布号 EP1153291(B1) 申请公布日期 2011.12.14
申请号 EP20000923060 申请日期 2000.01.12
申请人 MST TECHNOLOGY GMBH 发明人 DIMEO, FRANK, JR.;BHANDARI, GAUTAM
分类号 G01N33/00;G01N21/59;G01N21/75;G01N21/78;G01N27/04;G01N27/12;G01N27/22 主分类号 G01N33/00
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