PROCESS FOR FORMING CONTINUOUS COPPER THIN FILMS VIA VAPOR DEPOSITION

摘要

PURPOSE: A process for forming continuous copper thin films via vapor deposition is provided to make a multilayer material including copper by using one or more precursors. CONSTITUTION: A process for forming continuous copper thin films via vapor deposition includes the next step. A first layer includes a ruthenium domain and a copper area. A second layer including copper is deposited on the first layer by using a multi-layer substrate. A second layer is formed on a ruthenium domain in a deposition step. The second layer has a first thickness and 20~2,000 angstrom and a second thickness of 0~1,000 strong on a copper area. The first thickness is bigger than the second thickness.