THIN FILM TRANSISTOR WITH OFFSET STRUCTURE

摘要

PURPOSE: A thin film transistor of an offset structure is provided to reduce an off current and increase an on current. CONSTITUTION: A gate electrode(121) is formed on a substrate(111). A gate insulating film(123) is formed on the gate electrode. An active layer(125) is formed on the gate insulating film. Source/drain electrodes(133a,133b) are formed on the active layer. Ohmic contact layers(131a,131b) are formed between the active layer and the source/drain electrodes.