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发明名称
Enhancement normally off nitride semiconductor device and manufacturing method thereof
摘要
申请公布号
KR101092467(B1)
申请公布日期
2011.12.13
申请号
KR20090123987
申请日期
2009.12.14
申请人
发明人
分类号
H01L29/778
主分类号
H01L29/778
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代理人
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