| 摘要 |
A process for reducing or suppressing the appearance of watermarks in a hydrophobic surface of a semiconductor substrate prepared as a base substrate for epitaxial growth. The process includes cleaning the hydrophobic surface of the semiconductor substrate with an aqueous solution containing hydrofluoric acid (HF) and an additional acid having a pKa of less than 3, preferably hydrochloric acid (HCl), wherein the additional acid is present in the solution at a concentration by weight that is less than that of the HF; and final rinsing the cleaned hydrophobic surface of the semiconductor substrate with deionised water while subjecting the hydrophobic surface of the semiconductor substrate to megasonic waves for a time sufficient to reduce or suppress watermarks that could otherwise occur on the hydrophobic surface if the megasonic waves were not applied. |
