发明名称 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
摘要 A memory storage system of an embodiment includes a nonvolatile memory unit and memory control circuitry coupled to the memory unit. Storage locations of the memory unit are organized into one or more sub-blocks configured to store sectors of information from a host. The sectors of information can be identified by sector numbers of a predetermined order. The memory control circuitry is configured to write a sector of information to a location of a particular sub-block of a particular block. The memory control circuitry is further configured to write a sector of information to a location of a sub-block of the particular block that is other than the particular sub-block, regardless of the predetermined order of the sector numbers of the sectors of information. The memory control circuitry is further configured to write the sectors of information to the locations of the sub-blocks of the particular block substantially concurrently.
申请公布号 US8078797(B2) 申请公布日期 2011.12.13
申请号 US20090470944 申请日期 2009.05.22
申请人 ESTAKHRI PETRO;IMAN BERHANU;MICRON TECHNOLOGY, INC. 发明人 ESTAKHRI PETRO;IMAN BERHANU
分类号 G06F12/00;G06F3/06;G06F11/10;G06F12/02;G06F13/00;G11C16/08;G11C16/10;G11C29/00 主分类号 G06F12/00
代理机构 代理人
主权项
地址