发明名称 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
摘要 A thin film transistor substrate of horizontal electric field type liquid crystal display device includes: a gate line and a common line arranged in parallel on a substrate and formed from a first conductive layer; a data line formed from a second conductive layer, the data line crossing the gate line and the common line having a gate insulating film therebetween such that the data line, the gate line and the common line define a pixel area; a thin film transistor having a gate connected to the gate line and a source electrode connected to the data line; a common electrode extending from the common line into the pixel area and formed from the first conductive layer; a protective film for covering a plurality of signal lines and electrodes and the thin film transistor; a pixel hole in the protective film having an elongated shape that parallels the common electrode; and a pixel electrode connected to a side surface of a drain electrode of the thin film transistor and formed from a third conductive layer within the pixel hole.
申请公布号 US8077280(B2) 申请公布日期 2011.12.13
申请号 US20040978533 申请日期 2004.11.02
申请人 CHANG YOUN GYOUNG;CHO HEUNG LYUL;LG DISPLAY CO., LTD. 发明人 CHANG YOUN GYOUNG;CHO HEUNG LYUL
分类号 G02F1/1343;G02F1/133;G02F1/136;G02F1/1362;G03F7/20;H01L21/00;H01L29/10;H01L29/786 主分类号 G02F1/1343
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