发明名称 |
METHOD OF GRAPHENE MANUFACTURING |
摘要 |
The present invention relates to a method for manufacturing graphene by vapour phase epitaxy on a substrate comprising a surface of SiC, characterized in that the process of sublimation of silicon from the substrate is controlled by a flow of an inert gas or a gas other than an inert gas through the epitaxial reactor. The invention also relates to graphene obtained by this method. |
申请公布号 |
US2011300058(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113154920 |
申请日期 |
2011.06.07 |
申请人 |
STRUPINSKI WLODZIMIERZ;INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH |
发明人 |
STRUPINSKI WLODZIMIERZ |
分类号 |
C01B31/04;C30B25/02;C30B25/10;C30B25/14;C30B25/16;C30B25/18 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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