| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of processing an optical device wafer causing no deterioration of luminance of an optical device. <P>SOLUTION: This method of processing the optical device wafer is to divide the optical device wafer, in which a semiconductor layer is laminated on the surface of a substrate and a plurality of optical devices are formed in the semiconductor layer by being partitioned by scheduled dividing lines, into the individual optical devices, and includes a halogenated mineral applying process to apply a halogenated mineral on the back or the surface of the optical device wafer, a division-starting-point groove forming process to form a division-starting-point groove serving as a starting point of division by irradiating a laser beam applying ablation processing to a sapphire substrate to regions corresponding to the scheduled dividing lines from the back or the surface of the optical device wafer, and a dividing process to divide the optical device wafer into the individual optical devices along the division-starting-point groove by giving external force to the optical device wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
