| 摘要 |
The plasma generation device comp rising first plasma generation chamber 10 which has gas feed opening 12 and plasma exit 13, and first plasma generation means 11 which is arranged in space of said first plasma generation chamber in state of not exposed, and second plasma generation chamber 20 which has plasma feed opening 22 whereby plasma generated said first plasma generation chamber through said plasma exit, and second plasma generation means 21 which is arranged in space of said second plasma generation chamber in state of not exposed wherever generating higher density than plasma generated by said first plasma generation chamber.
|
