| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the excess growth of a buried layer and also background roughness on the bottom plane of a wafer in a semiconductor optical element having a laminate structure extended including other direction components such as slopes and curves than a [011] direction component. <P>SOLUTION: A semiconductor optical element comprises a mesa-shaped laminate structure extended on a semiconductor substrate having a (100) plane as its principal plane including direction components other than a [011] direction component, a plurality of protrusions disposed on the semiconductor substrate at both sides of the laminate structure and having a different height than the laminate structure, and a buried layer filling up both sides of the laminate structure and spaces between the plurality of protrusions. The buried layer includes a first buried section positioned at side faces on both sides of the laminate structure and a second buried section filling up spaces between the protrusions, where the cross sectional area (or deposited amount) of the first buried section and that of the second buried section are almost equal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
