PROCESS FOR PRODUCING SILICON CARBIDE SUBSTRATE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

Disclosed is a process for producing silicon carbide substrates which is capable of reducing production costs, the process involving: a step of preparing a base substrate (10) and an SiC substrate (20); a step of making a layered substrate by placing the base substrate (10) and the SiC substrate (20) on top of one another; a step of making a joined substrate (3) by heating the layered substrate; a step of causing voids (30) that have been formed at the joining interface (15) to move in the thickness direction of the joined substrate (3) by heating the joined substrate (3) in a manner such that the temperature of the base substrate (10) becomes higher than the temperature of the SiC substrate (20); and a step of removing the voids (30) by removing a region of the base substrate (10) including the principal surface (10B) thereof on the side opposite from the SiC substrate (20).