MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate where a silicon layer with high crystallinity is formed to be thick by using a solid-phase epitaxial growth method at a low temperature, and to increase crystal growth speed compared to a conventional vapor phase epitaxial growth method.

SOLUTION: A silicon layer is formed on a single crystal silicon layer disposed on a base substrate via an insulating layer so that a needle-like silicon layer which is a portion of an initial stage of deposition and whose arrangement of a crystal face is adjusted to the single crystal silicon layer is grown by a vapor phase epitaxial method. The other portion of the silicon layer is grown by the solid-phase epitaxial method with the needle-like silicon layer as a seed crystal. Thus, a semiconductor substrate with the thick single crystal and crystal silicon layers is manufactured.

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