| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency module capable of avoiding bias-jump at high temperature current-carrying time and commonalizing of a external power source regardless of products in actual operation. <P>SOLUTION: The high frequency module 1 comprises: a semiconductor device 24; a input matching circuit 17; an output matching circuit 18; gate bias circuits 60,70 connected to the input matching circuit 17, for high temperature operation, and for actual operation; a gate bias terminal 31a for high temperature operation connected to the gate bias circuit 60 for high temperature operation; a gate bias terminal 41a for actual operation connected to the gate bias circuit 70 for actual operation; a high frequency input terminal 21a connected to the input matching circuit 17; a drain bias circuit 80 connected to the output matching circuit 18; a drain bias terminal 41b connected to the drain bias circuit 80; and a high frequency output terminal 21b connected to the output matching circuit 18; and is housed in one package. <P>COPYRIGHT: (C)2012,JPO&INPIT |
