发明名称 |
Reduction of Copper or Trace Metal Contaminants in Plasma Electrolytic Oxidation Coatings |
摘要 |
A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer. |
申请公布号 |
US2011297319(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US20100794470 |
申请日期 |
2010.06.04 |
申请人 |
CHEN XING;JI CHENGXIANG;TAI CHIU-YING;MKS INSTRUMENTS, INC. |
发明人 |
CHEN XING;JI CHENGXIANG;TAI CHIU-YING |
分类号 |
H01L21/306;C25D11/04;C25D11/16;C25D11/18;C25D11/24 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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