| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method that is advantageous to simplify manufacturing of a solid-state image pickup device and/or suppress dispersion of characteristics of pixels. <P>SOLUTION: A solid-state image pickup device having plural pixels on a semiconductor substrate 100 is manufactured. Each pixel contains a photoelectric conversion element containing a storage area 104 for storing charges and a transfer gate 103 forming a channel for transferring the charges stored in the storage area to a charge voltage converter 105. A method of manufacturing the solid-state image pickup device comprises a resist pattern forming step of forming a resist pattern having one opening for each pixel group, and a storage area forming step for implanting ions into the semiconductor substrate 100 in respective ion implantation directions of N so that the ions are implanted to the lower side of the transfer gate 103 of each of the pixels of N of each pixel group through each opening of the resist pattern, thereby forming the storage area 104 in each of the pixels of N of each pixel group. <P>COPYRIGHT: (C)2012,JPO&INPIT |
