| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which an overlying metal interconnection is formed so as not to cause damage to an underlying metal interconnection, and parasitic capacitance between interconnections is reduced; and a method for manufacturing the same. <P>SOLUTION: A semiconductor device comprises: a first metal interconnection layer provided on a semiconductor substrate; a diffusion protection film provided on the first metal interconnection, for protecting diffusion of metal of the first metal interconnection layer; a first insulation film provided on the diffusion protection film; a second insulation film provided on the first insulation film, and composed of the same material as the diffusion protection film; a third insulation film provided on the second insulation film; and a second metal interconnection layer filled into a connection hole formed in the diffusion protection film, the first insulation film, the second insulation film and the third insulation film so as to be electrically connected to the first metal interconnection layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
