SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to place a plurality of active layers in the inside of a signal semiconductor light emitting device, thereby improving optical power. CONSTITUTION: A conductive substrate(110) includes first and second major surfaces which are facing each other. A first light emitting structure(120) comprises a first n-type semiconductor layer(121), a first p-type semiconductor layer(122), and a first active layer(123). A first n-type electrode(124) is electrically connected to the first n-type semiconductor layer. A second light emitting structure(130) comprises a second n-type semiconductor layer, a second p-type semiconductor layer, and a second active layer. A second n-type electrode(134) is arranged in one surface of the second n-type semiconductor layer.