| 摘要 |
<p>According to one embodiment, a semiconductor light emitting device includes a semiconductor layer (15), a first electrode (16), a second electrode (17), a first insulating layer (18), a first interconnect layer (21), a second interconnect layer (22), a first metal pillar (23), a second metal pillar (24) and a second insulating layer (25). The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge (21a) of a part of the first interconnect layer (21) is exposed laterally from the first insulating layer and the second insulating layer.</p> |
