发明名称 |
Biploar resistive-switching memory with a single diode per memory cell |
摘要 |
According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell. |
申请公布号 |
US8072795(B1) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090607898 |
申请日期 |
2009.10.28 |
申请人 |
WANG YUN;PHATAK PRASHANT;CHIANG TONY;INTERMOLECULAR, INC. |
发明人 |
WANG YUN;PHATAK PRASHANT;CHIANG TONY |
分类号 |
G11C11/00;G11C11/36 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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