发明名称 Charge pump-type voltage booster circuit and semiconductor integrated circuit device
摘要 A booster circuit includes first and second transistors, a first capacitor, a first drive circuit, a second capacitor, a first controller, and a second controller. The first and second transistors are connected in series between a first voltage and a second voltage. One end of the first capacitor is connected to a connection node between the first transistor and the second transistor. The first drive circuit boosts the voltage at the other end of the first capacitor. The second capacitor is connected between the second voltage and a reference voltage. The first controller controls conduction/non-conduction of the first transistor. The second controller inputs any of the first voltage and the second voltage to the second transistor, and thereby controls conduction/non-conduction of the second transistor. The boost circuit is supplied with the reference voltage, a supply voltage, and a boost clock signal, and generates the second voltage by boosting the supply voltage.
申请公布号 US8072257(B2) 申请公布日期 2011.12.06
申请号 US20090588150 申请日期 2009.10.06
申请人 OOTANI KEIGO;TAHATA TAKASHI;RENESAS ELECTRONICS CORPORATION 发明人 OOTANI KEIGO;TAHATA TAKASHI
分类号 G05F1/10 主分类号 G05F1/10
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