发明名称 |
METHOD FOR PRODUCING GRAPHENE FILM, METHOD FOR MANUFACTURING ELECTRONIC ELEMENT, AND METHOD FOR TRANSFERRING GRAPHENE FILM TO SUBSTRATE |
摘要 |
The invention provides a graphene film producing method that can produce large-area graphene without requiring high temperature, an electronic element manufacturing method with which a resist FET circuit pattern can easily be formed on an element substrate, and that can be easily applied to an area-increasing process by integrating elements, and a method for transferring a graphene film to a substrate, whereby a large-area graphene film can be isolated, and a graphene film of a desired size can be transferred to a desired position of a substrate. The method is characterized by the step of contacting an amorphous carbon film to a liquid metal such as gallium to form a graphene film at the contact interface. |
申请公布号 |
KR20110131225(A) |
申请公布日期 |
2011.12.06 |
申请号 |
KR20117022297 |
申请日期 |
2010.03.17 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FUJITA JUN ICHI |
分类号 |
C01B31/04;B41M3/00;B41M5/10;H01L21/20 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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