发明名称 |
Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area |
摘要 |
A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that failed site after UIS test randomly located in active area which means avalanche capability of the semiconductor power device is enhanced by implementation of the dummy cells. |
申请公布号 |
US8072000(B2) |
申请公布日期 |
2011.12.06 |
申请号 |
US20090453086 |
申请日期 |
2009.04.29 |
申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L29/74;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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