发明名称 DIFFUSION AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY
摘要 <P>PROBLEM TO BE SOLVED: To provide a diffusion agent composition excellent in coating film formation properties and discharge stability and capable of being applied suitably for a spray coating method, a method of forming an impurity diffusion layer using the diffusion agent composition, and a solar battery. <P>SOLUTION: The diffusion agent composition used for forming an impurity diffusion layer into a semiconductor substrate contains: an impurity diffusion composition (A); a silicon compound (B); and a solvent (C) containing a solvent (C1) having a boiling point of 100&deg;C or less, a solvent (C2) having a boiling point of 120-180&deg;C and a solvent (C3) having a boiling point of 240-300&deg;C. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011243706(A) 申请公布日期 2011.12.01
申请号 JP20100113536 申请日期 2010.05.17
申请人 TOKYO OHKA KOGYO CO LTD 发明人 MUROTA ATSUSHI;HIRAI TAKAAKI
分类号 H01L21/225;H01L31/04 主分类号 H01L21/225
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