发明名称 PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.</p>
申请公布号 KR101089009(B1) 申请公布日期 2011.12.01
申请号 KR20070062143 申请日期 2007.06.25
申请人 发明人
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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