发明名称 |
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER |
摘要 |
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder. |
申请公布号 |
US2011290174(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113181167 |
申请日期 |
2011.07.12 |
申请人 |
LEONARD ROBERT TYLER;POWELL ADRIAN;TSVETKOV VALERI F.;NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA |
发明人 |
LEONARD ROBERT TYLER;POWELL ADRIAN;TSVETKOV VALERI F. |
分类号 |
C30B23/02;H01L21/205;C30B23/00;C30B23/06;C30B25/02;C30B25/10;C30B25/16;C30B29/36;C30B33/00;H01L21/324 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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